Higher Voltage Ni/CdTe Schottky Diodes With Low Leakage Current
نویسندگان
چکیده
منابع مشابه
Analysis of current–voltage characteristics of inhomogeneous Schottky diodes at low temperatures
Two approaches of Gaussian distribution of barrier heights in inhomogeneous Schottky diodes have been analyzed by comparing the results for consistency between the two. For this the current–voltage characteristics of inhomogeneous Schottky diodes have been generated by using analytically solved thermionic-emission diffusion equation incorporating Gaussian distribution of barrier heights and by ...
متن کاملReverse-bias leakage current reduction in GaN Schottky diodes by electrochemical surface treatment
An electrochemical surface treatment has been developed that decreases the reverse-bias leakage current in Schottky diodes fabricated on GaN grown by molecular-beam epitaxy ~MBE!. This treatment suppresses current flow through localized leakage paths present in MBE-grown GaN, while leaving other diode characteristics, such as the Schottky barrier height, largely unaffected. A reduction in leaka...
متن کاملGraphene-silicon Schottky diodes.
We have fabricated graphene-silicon Schottky diodes by depositing mechanically exfoliated graphene on top of silicon substrates. The resulting current-voltage characteristics exhibit rectifying diode behavior with a barrier energy of 0.41 eV on n-type silicon and 0.45 eV on p-type silicon at the room temperature. The I-V characteristics measured at 100, 300, and 400 K indicate that temperature ...
متن کاملDynamic Random Access Memory with Self-controllable Voltage Level to reduce low leakage current in VLSI
Today trend is circuit characterized by reliability, low power dissipation, low leakage current, low cost and there is required to reduce each of these. To reduce device size and increasing chip density have increase the design complexity. The memories have provided the system designer with components of considerable capability and extensive application. Dynamic random access memory (DRAM) give...
متن کاملCurrent-Voltage Characteristic of Schottky- Barrier CNTFET Considering Resonant Transmission
In this paper previous works on calculating the output current of SBCNFET are reviewed and a new three capacitance model for estimating potential profile along the channel is proposed. Furthermore the transmission coefficient through the channel has studied and some new formulas considering the electron coherency in the channel are suggested. Electron coherency will results in resonant transmis...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IEEE Transactions on Nuclear Science
سال: 2009
ISSN: 0018-9499
DOI: 10.1109/tns.2009.2021162